Highly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers

Jiang Pu; Kazuma Funahashi; Chang-Hsiao Chen; Ming-Yang Li; Lain-Jong Li; Taishi Takenobu

doi:10.1002/adma.201503872

Highly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers

Adv Mater. 2016 Jun;28(21):4111-9. doi: 10.1002/adma.201503872. Epub 2016 Mar 23.

Authors

Jiang Pu¹, Kazuma Funahashi¹, Chang-Hsiao Chen², Ming-Yang Li^{3

4}, Lain-Jong Li³, Taishi Takenobu^{1

5}

Affiliations

¹ Department of Advanced Science and Engineering, Waseda University, Tokyo, 169-8555, Japan.
² Department of Automatic Control Engineering, Feng Chia University, Taichung, 40724, Taiwan.
³ Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia.
⁴ Research Center for Applied Sciences, Academia Sinica, Taipei, 10617, Taiwan.
⁵ Kagami Memorial Laboratory for Material Science and Technology, Waseda University, Tokyo, 169-0051, Japan.

PMID: 27007295
DOI: 10.1002/adma.201503872

Abstract

Complementary inverters constructed from large-area monolayers of WSe2 and MoS2 achieve excellent logic swings and yield an extremely high gain, large total noise margin, low power consumption, and good switching speed. Moreover, the WSe2 complementary-like inverters built on plastic substrates exhibit high mechanical stability. The results provide a path toward large-area flexible electronics.

Keywords: CMOS inverters; chemical vapor deposition; electric double layer transistors; flexible electronics; transition metal dichalcogenide monolayers.