Nonvolatile memory devices based on poly(vinyl alcohol) + graphene oxide hybrid composites

Yanmei Sun; Junguo Lu; Chunpeng Ai; Dianzhong Wen

doi:10.1039/c6cp00007j

Nonvolatile memory devices based on poly(vinyl alcohol) + graphene oxide hybrid composites

Phys Chem Chem Phys. 2016 Apr 28;18(16):11341-7. doi: 10.1039/c6cp00007j.

Authors

Yanmei Sun¹, Junguo Lu¹, Chunpeng Ai², Dianzhong Wen²

Affiliations

¹ Communication and Electronics Engineering Institute, Qiqihar University, Qiqihar, 161006, China. sym791122@163.com and HLJ Province Key Laboratories of Senior-education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China. wendianzhong@hlju.edu.cn.
² HLJ Province Key Laboratories of Senior-education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China. wendianzhong@hlju.edu.cn.

PMID: 27056548
DOI: 10.1039/c6cp00007j

Abstract

Nonvolatile memory devices based on active layers of poly(vinyl alcohol) (PVA) + graphene oxide (GO) hybrid composites have been fabricated. The performance of the ITO/PVA + GO/Al device was compared with that of the ITO/PVA/Al device. The ITO/PVA + GO/Al device showed excellent performance compared to the ITO/PVA/Al device (an ON/OFF resistance ratio of 1.2 × 10(2) at 1 V, V(SET )∼ -1.45 V and V(RESET) ∼ 3.6 V), with a higher ON/OFF resistance ratio of 3 × 10(4) at 1 V and lower operating voltages of V(SET) ∼ -0.75 V and V(RESET) ∼ 3.0 V. Furthermore, endurance performance and write-read-erase-reread (WRER) cycle tests manifest that the presence of GO in ITO/PVA + GO/Al devices makes them have better stability and repeatability. The results show that the performance of hybrid devices can be effectively enhanced by the introduction of GO into the PVA matrix.

Publication types

Research Support, Non-U.S. Gov't