High Sensitivity Polymer Visible-Near Infrared Photodetectors via an Inverted Device Structure and Manipulation of Injection Barrier Height

Siping Wu; Biao Xiao; Baofeng Zhao; Zhicai He; Hongbin Wu; Yong Cao

doi:10.1002/smll.201600721

High Sensitivity Polymer Visible-Near Infrared Photodetectors via an Inverted Device Structure and Manipulation of Injection Barrier Height

Small. 2016 Jul;12(25):3374-80. doi: 10.1002/smll.201600721. Epub 2016 Jun 20.

Authors

Siping Wu¹, Biao Xiao¹, Baofeng Zhao¹, Zhicai He¹, Hongbin Wu¹, Yong Cao¹

Affiliation

¹ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China.

PMID: 27323208
DOI: 10.1002/smll.201600721

Abstract

Visible-near infrared photodetectors are reported with excellent overall device parameters from conjugated polymers with different optical bandgaps by optimal design in device structure and optimizing the thickness of the photoactive layer in nanoscale. The best visible-near infrared photodetectors show high detectivity (D*) of 1.7 × 10(13) Jones at a wavelength of 710 nm, which is among one of the best results of polymer photodetectors reported to date.

Keywords: detectivity; injection barrier height; inverted device structure; nanophotonics; polymer photodetectors.