Deposition of dielectric films on silicon using a fore-vacuum plasma electron source

D B Zolotukhin; E M Oks; A V Tyunkov; Yu G Yushkov

doi:10.1063/1.4953112

Deposition of dielectric films on silicon using a fore-vacuum plasma electron source

Rev Sci Instrum. 2016 Jun;87(6):063302. doi: 10.1063/1.4953112.

Authors

D B Zolotukhin¹, E M Oks¹, A V Tyunkov¹, Yu G Yushkov¹

Affiliation

¹ Tomsk State University of Control Systems and Radioelectronics, 40 Lenin Ave., Tomsk 634050, Russia.

PMID: 27370442
DOI: 10.1063/1.4953112

Abstract

We describe an experiment on the use of a fore-vacuum-pressure, plasma-cathode, electron beam source with current up to 100 mA and beam energy up to 15 keV for deposition of Mg and Al oxide films on Si substrates in an oxygen atmosphere at a pressure of 10 Pa. The metals (Al and Mg) were evaporated and ionized using the electron beam with the formation of a gas-metal beam-plasma. The plasma was deposited on the surface of Si substrates. The elemental composition of the deposited films was analyzed.