Direct Observation of Dopants Distribution and Diffusion in GaAs Planar Nanowires with Atom Probe Tomography

Jiangtao Qu; Wonsik Choi; Parsian Katal Mohseni; Xiuling Li; Yingjie Zhang; Hansheng Chen; Simon Ringer; Rongkun Zheng

doi:10.1021/acsami.6b08919

Direct Observation of Dopants Distribution and Diffusion in GaAs Planar Nanowires with Atom Probe Tomography

ACS Appl Mater Interfaces. 2016 Oct 5;8(39):26244-26250. doi: 10.1021/acsami.6b08919. Epub 2016 Sep 27.

Authors

Jiangtao Qu, Wonsik Choi¹, Parsian Katal Mohseni¹, Xiuling Li¹, Yingjie Zhang², Hansheng Chen, Simon Ringer, Rongkun Zheng

Affiliations

¹ Department of Electrical and Computer Engineering, Micro and Nanotechnology lab, University of Illinois , Urbana, Illinois 61801, United States.
² Australian Nuclear Science and Technology Organisation , Locked Bag 2001, Kirrawee DC, New South Wales 2232, Australia.

PMID: 27633044
DOI: 10.1021/acsami.6b08919

Abstract

Intentional and unintentional doping in semiconductor nanowires undoubtedly have significant impact on the device performance. However, spatially resolved precise determination of dopant concentration is challenging due to insufficient sensitivity and resolution of conventional techniques. In this paper, quantitative 3D distribution of Si and Zn dopants in planar GaAs nanowires and their interface with AlGaAs film underneath are obtained by using a unique atom probe tomography technique, providing critical insights for the growth and potential applications of these nanowires.

Keywords: APT; FIB; NWs; doping; planar GaAs nanowires; tomography.