Correlation between Chemical Dopants and Topological Defects in Catalytically Active Nanoporous Graphene

Yoshikazu Ito; Yuhao Shen; Daisuke Hojo; Yoji Itagaki; Takeshi Fujita; Linghan Chen; Tsutomu Aida; Zheng Tang; Tadafumi Adschiri; Mingwei Chen

doi:10.1002/adma.201604318

Correlation between Chemical Dopants and Topological Defects in Catalytically Active Nanoporous Graphene

Adv Mater. 2016 Dec;28(48):10644-10651. doi: 10.1002/adma.201604318. Epub 2016 Oct 10.

Authors

Yoshikazu Ito^{1

2}, Yuhao Shen^{1

3}, Daisuke Hojo¹, Yoji Itagaki⁴, Takeshi Fujita¹, Linghan Chen¹, Tsutomu Aida⁵, Zheng Tang³, Tadafumi Adschiri^{1

4}, Mingwei Chen⁶

Affiliations

¹ WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan.
² PRESTO, Japan Science and Technology Agency, Saitama, 332-0012, Japan.
³ State Key Laboratory of Polar Materials and Devices, Ministry of Education of China, East China Normal University, Shanghai, 200241, China.
⁴ Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai, 980-8577, Japan.
⁵ New Industry Creation Hatchery Center, Tohoku University, Sendai, 980-8579, Japan.
⁶ CREST, Japan Science and Technology Agency, Saitama, 332-0012, Japan.

PMID: 27723132
DOI: 10.1002/adma.201604318

Abstract

The interplay between chemical dopants and topological defects plays a crucial role in electrocatalysis of doped graphene. By systematically tuning the curvatures, thereby the density of topological defects, of 3D nanoporous graphene, the intrinsic correlation of topological defects with chemical doping contents and dopant configurations is revealed, shining lights into the structural and chemical origins of HER activities of graphene.

Keywords: chemical vapor deposition; hydrogen evolution reaction; nanoparticles; nanoporous graphene; nitrogen-sulfur-phosphorus co-doping.