The relationship between the dislocations and microstructure in In0.82Ga0.18As/InP heterostructures

Liang Zhao; Zuoxing Guo; Qiulin Wei; Guoqing Miao; Lei Zhao

doi:10.1038/srep35139

The relationship between the dislocations and microstructure in In_0.82Ga_0.18As/InP heterostructures

Sci Rep. 2016 Oct 11:6:35139. doi: 10.1038/srep35139.

Authors

Liang Zhao¹, Zuoxing Guo¹, Qiulin Wei¹, Guoqing Miao², Lei Zhao¹

Affiliations

¹ Key Lab of Automobile Materials Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun, 130025, P.R. China.
² State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, P.R. China.

Abstract

In this work, we propose a formation mechanism to explain the relationship between the surface morphology (and microstructure) and dislocations in the In_0.82Ga_0.18As/InP heterostructure. The In_0.82Ga_0.18As epitaxial layers were grown on the InP (100) substrate at various temperatures (430 °C, 410 °C and 390 °C) using low pressure metalorganic chemical vapor deposition (LP-MOCVD). Obvious protrusions and depressions were obseved on the surface of the In_0.82Ga_0.18As/InP heterostructure because of the movement of dislocations from the core to the surface. The surface morphologies of the In_0.82Ga_0.18As/InP (100) system became uneven with increasing temperature, which was associated with the formation of dislocations. Such research investigating the dislocation of large lattice mismatch heterostructures may play an important role in the future-design of semiconductor films.

Publication types

Research Support, Non-U.S. Gov't