A near infrared organic photodiode (OPD) utilizing a double electron blocking layer (EBL) fabricated by the sequential deposition of molybdenum (VI) oxide (MoO3) and poly(3,4ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) is reported. The double EBL improves the on/off current ratio of OPD up to 1.36 x 104 at -1V, which is one order of magnitude higher than PEDOT:PSS single EBL (2.45 x 103) and three orders of magnitude higher than that of MoO3 single EBL (7.86). The detectivity at near infrared (800 nm) at -1V is 4.90 x 1011 Jones, which is 2.83 times higher than the PEDOT:PSS single EBL and 2 magnitudes higher compared to the MoO3 single EBL.