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, 9 (4), 044204
eCollection

Superconductivity in Carrier-Doped Silicon Carbide

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Superconductivity in Carrier-Doped Silicon Carbide

Takahiro Muranaka et al. Sci Technol Adv Mater.

Abstract

We report growth and characterization of heavily boron-doped 3C-SiC and 6H-SiC and Al-doped 3C-SiC. Both 3C-SiC:B and 6H-SiC:B reveal type-I superconductivity with a critical temperature Tc=1.5 K. On the other hand, Al-doped 3C-SiC (3C-SiC:Al) shows type-II superconductivity with Tc=1.4 K. Both SiC:Al and SiC:B exhibit zero resistivity and diamagnetic susceptibility below Tc with effective hole-carrier concentration n higher than 1020 cm-3. We interpret the different superconducting behavior in carrier-doped p-type semiconductors SiC:Al, SiC:B, Si:B and C:B in terms of the different ionization energies of their acceptors.

Keywords: Al-doped SiC; boron-doped SiC; hexagonal and cubic SiC; type-I superconductor; type-II superconductor.

Figures

Figure 1
Figure 1
(a) Unit cell of cubic 3C-SiC. (b) Four unit cells of hexagonal 6H–SiC. For the drawings the software Vesta was used [20].
Figure 2
Figure 2
Temperature dependence of dc magnetic susceptibility in 3C-SiC:B and 6H-SiC.
Figure 3
Figure 3
Magnetization versus magnetic field in (a) 3C-SiC:B and (b) 6H-SiC.
Figure 4
Figure 4
Temperature dependence of resistivity in 3C-SiC:B and 6H-SiC:B. The inset magnifies the region near Tc.
Figure 5
Figure 5
Temperature dependence of resistivity under different magnetic fields (T-scan) in (a) 3C-SiC:B and (b) 6H-SiC:B.
Figure 6
Figure 6
Magnetic field dependence of resistivity (H-scan) in (a) 3C-SiC:B and (b) 6H-SiC:B.
Figure 7
Figure 7
HT phase diagram for (a) 3C-SiC:B and (b) 6H-SiC:B, determined from the onset of superconductivity in T-scan and H-scan of resistivity.
Figure 8
Figure 8
Temperature dependence of dc magnetic susceptibility in SiC:Al. The inset shows magnetization versus magnetic field at T=0.45 K.
Figure 9
Figure 9
Temperature dependence of resistivity in 3C-SiC:Al. The inset magnifies the region near Tc.
Figure 10
Figure 10
(a) Temperature dependence of resistivity normalized by ρ0 at different applied magnetic fields (0–400 Oe with a 20 Oe step) at 0.35–2 K (T-scan). (b) Magnetic field dependence of resistivity normalized by ρ0 (0.35–1.0 K) at 0–400 Oe (H-scan).
Figure 11
Figure 11
Temperature dependence of the upper critical field Hc2 and of the irreversibility field Hirr in 3C-SiC:Al.

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