Bulk molybdenum field emitters by inductively coupled plasma etching

Ningli Zhu; Matthew T Cole; William I Milne; Jing Chen

doi:10.1039/c6cp06340c

Bulk molybdenum field emitters by inductively coupled plasma etching

Phys Chem Chem Phys. 2016 Dec 7;18(48):33152-33157. doi: 10.1039/c6cp06340c.

Authors

Ningli Zhu¹, Matthew T Cole², William I Milne³, Jing Chen⁴

Affiliations

¹ Institute of Microelectronics, Peking University, Beijing, 100871, P. R. China. j.chen@pku.edu.cn and Electrical Engineering Division, Department of Engineering, University of Cambridge, UK.
² Electrical Engineering Division, Department of Engineering, University of Cambridge, UK.
³ Electrical Engineering Division, Department of Engineering, University of Cambridge, UK and College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.
⁴ Institute of Microelectronics, Peking University, Beijing, 100871, P. R. China. j.chen@pku.edu.cn.

PMID: 27892568
DOI: 10.1039/c6cp06340c

Abstract

In this work we report on the fabrication of inductively coupled plasma (ICP) etched, diode-type, bulk molybdenum field emitter arrays. Emitter etching conditions as a function of etch mask geometry and process conditions were systematically investigated. For optimized uniformity, aspect ratios of >10 were achieved, with 25.5 nm-radius tips realised for masks consisting of aperture arrays some 4.45 μm in diameter and whose field electron emission performance has been herein assessed.