Enhanced Optoelectronic Performance on the (110) Lattice Plane of an MAPbBr3 Single Crystal

Zhiyuan Zuo; Jianxu Ding; Ying Zhao; Songjie Du; Yongfu Li; Xiaoyuan Zhan; Hongzhi Cui

doi:10.1021/acs.jpclett.6b02812

Enhanced Optoelectronic Performance on the (110) Lattice Plane of an MAPbBr₃ Single Crystal

J Phys Chem Lett. 2017 Feb 2;8(3):684-689. doi: 10.1021/acs.jpclett.6b02812. Epub 2017 Jan 24.

Authors

Zhiyuan Zuo^{1

2}, Jianxu Ding^{3

4}, Ying Zhao⁴, Songjie Du⁴, Yongfu Li¹, Xiaoyuan Zhan⁴, Hongzhi Cui⁴

Affiliations

¹ Advanced Research Center for Optics, Shandong University , Jinan 250100, China.
² State Key Laboratory of Crystal Materials, Shandong University , Jinan 250100, China.
³ State Key Laboratory of Mining Disaster Prevention and Control Co-founded by Shandong Province and the Ministry of Science and Technology, Shandong University of Science and Technology , Qingdao 266590, China.
⁴ College of Materials Science and Engineering, Shandong University of Science and Technology , Qingdao 266590, China.

PMID: 28111957
DOI: 10.1021/acs.jpclett.6b02812

Abstract

Hybrid organic-inorganic lead halide perovskites have attracted significant attention due to their impressive optoelectronic properties. MAPbX₃ (MA= CH₃NH₃⁺, X= Cl, Br or I), the most popular member of this family, has been recognized as an important next-generation optoelectronic materials contender, and remarkable progress has been achieved in both thin films and single crystals. However, the lack of optimizations in energy harvest, transportation, carrier extraction, and process compatibility is hindering their future development. In this study, a triangle prism MAPbBr₃ single crystal exposing (100) and (110) crystallographic planes was successfully synthesized, and the optoelectronic performances of these two lattice planes were systematically explored by employing a planar metal-semiconductor-metal (MSM) device. Compared to the device fabricated on the (100) plane, a 153.33% enhancement of responsivity was achieved under 10 μW irradiation and 10 V bias on the (110) plane. Finally, possible mechanism for such an enhancement was discussed based on the different defect migration behaviors of (100) and (110) planes.