Fabrication of Orientation-Tunable Si Nanowires on Silicon Pyramids with Omnidirectional Light Absorption

Zhibin Pei; Haibo Hu; Shuxin Li; Changhui Ye

doi:10.1021/acs.langmuir.6b04068

Fabrication of Orientation-Tunable Si Nanowires on Silicon Pyramids with Omnidirectional Light Absorption

Langmuir. 2017 Apr 18;33(15):3569-3575. doi: 10.1021/acs.langmuir.6b04068. Epub 2017 Apr 7.

Authors

Zhibin Pei^{1

2}, Haibo Hu¹, Shuxin Li¹, Changhui Ye¹

Affiliations

¹ Anhui Key Laboratory of Nanomaterials and Technology, and Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences , Hefei 230031, China.
² University of Science and Technology of China , Hefei 230026, China.

PMID: 28368596
DOI: 10.1021/acs.langmuir.6b04068

Abstract

In this work, the different orientation of SiNWs on Si pyramids by a two step MACE method have been fabricated. By tuning the structure of Ag catalyst film and controlling the concentration of H₂O₂ or the etching temperature, the tunability of the orientation of SiNWs from <111> to <100> on Si pyramids was realized. Si structures composed of Si pyramids and SiNWs exhibit better omnidirectional light-trapping ability by multiple reflections. Si structures with structural tunability and enhanced light harvesting performance will find a wide variety of significant applications in solar cells, photodetectors, and optoelectronic devices.

Publication types

Research Support, Non-U.S. Gov't