Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers

Saquib Shamim; S Mahapatra; G Scappucci; W M Klesse; M Y Simmons; Arindam Ghosh

doi:10.1038/srep46670

Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers

Sci Rep. 2017 May 4:7:46670. doi: 10.1038/srep46670.

Authors

Saquib Shamim¹, S Mahapatra², G Scappucci², W M Klesse², M Y Simmons², Arindam Ghosh¹

Affiliations

¹ Department of Physics, Indian Institute of Science, Bangalore 560 012, India.
² Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney NSW 2052, Australia.

Abstract

We report quantum transport measurements on two dimensional (2D) Si:P and Ge:P δ-layers and compare the inelastic scattering rates relevant for weak localization (WL) and universal conductance fluctuations (UCF) for devices of various doping densities (0.3-2.5 × 10¹⁸ m^-2) at low temperatures (0.3-4.2 K). The phase breaking rate extracted experimentally from measurements of WL correction to conductivity and UCF agree well with each other within the entire temperature range. This establishes that WL and UCF, being the outcome of quantum interference phenomena, are governed by the same dephasing rate.

Publication types

Research Support, Non-U.S. Gov't