A powerful characterization technique, pulse capacitance-voltage (CV) technique, was used to investigate oxide traps before and after annealing for lanthanide zirconium oxide thin films deposited on n-type Si (111) substrates at 300 °C by liquid injection Atomic Layer Deposition (ALD). The results indicated that: (1) more traps were observed compared to the conventional capacitance-voltage characterization method in LaZrOx; (2) the time-dependent trapping/de-trapping was influenced by the edge time, width and peak-to-peak voltage of a gate voltage pulse. Post deposition annealing was performed at 700 °C, 800 °C and 900 °C in N₂ ambient for 15 s to the samples with 200 ALD cycles. The effect of the high temperature annealing on oxide traps and leakage current were subsequently explored. It showed that more traps were generated after annealing with the trap density increasing from 1.41 × 1012 cm-2 for as-deposited sample to 4.55 × 1012 cm-2 for the 800 °C annealed one. In addition, the leakage current density increase from about 10-⁶ A/cm² at Vg = +0.5 V for the as-deposited sample to 10-3 A/cm² at Vg = +0.5 V for the 900 °C annealed one.
Keywords: high temperature annealing; lanthanide zirconium oxide; oxide traps; pulse capacitance-voltage.