A scanning probe mounted on a field-effect transistor: Characterization of ion damage in Si

Kumjae Shin; Hoontaek Lee; Min Sung; Sang Hoon Lee; Hyunjung Shin; Wonkyu Moon

doi:10.1016/j.micron.2017.07.011

A scanning probe mounted on a field-effect transistor: Characterization of ion damage in Si

Micron. 2017 Oct:101:197-205. doi: 10.1016/j.micron.2017.07.011. Epub 2017 Jul 24.

Authors

Kumjae Shin¹, Hoontaek Lee¹, Min Sung¹, Sang Hoon Lee², Hyunjung Shin³, Wonkyu Moon⁴

Affiliations

¹ Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Republic of Korea.
² Department of Mechanical and Automotive Engineering, Seoul National University of Science and Technology (SeoulTech), Seoul, Republic of Korea.
³ Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea. Electronic address: hshin@skku.edu.
⁴ Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Republic of Korea. Electronic address: wkmoon@postech.ac.kr.

PMID: 28797948
DOI: 10.1016/j.micron.2017.07.011

Abstract

We have examined the capabilities of a Tip-On-Gate of Field-Effect Transistor (ToGoFET) probe for characterization of FIB-induced damage in Si surface. A ToGoFET probe is the SPM probe which the Field Effect Transistor(FET) is embedded at the end of a cantilever and a Pt tip was mounted at the gate of FET. The ToGoFET probe can detect the surface electrical properties by measuring source-drain current directly modulated by the charge on the tip. In this study, a Si specimen whose surface was processed with Ga+ ion beam was prepared. Irradiation and implantation with Ga+ ions induce highly localized modifications to the contact potential. The FET embedded on ToGoFET probe detected the surface electric field profile generated by schottky contact between the Pt tip and the sample surface. Experimentally, it was shown that significant differences of electric field due to the contact potential barrier in differently processed specimens were observed using ToGOFET probe. This result shows the potential that the local contact potential difference can be measured by simple working principle with high sensitivity.

Keywords: FIB induced damage; Field-effect transistor mounted probe; Focused ion beam(FIB); Scanning probe microscopy; Schottky contact; Surface electric field.