Carbon nanotubes (CNTs) have been directly grown onto a silicon microsystem by a local synthesis method. This method has potential for wafer-level complimentary metal-oxide-semiconductor (CMOS) transistor-compatible integration of CNTs into more complex Si microsystems; enabling, e.g., gas sensors at low cost. In this work, we demonstrate that the characteristics of CNTs grown on specific locations can be changed by tuning the synthesis conditions. We also investigate the role of the contact between CNTs and the Si microsystem; observing a large influence on the electrical characteristics of our devices. Different contact modes can render either an ohmic or Schottky-like rectifying characteristics.
Keywords: Schottky barrier; carbon nanotubes; contacts; local synthesis; microheater.