Gate-Tunable WSe 2/SnSe 2 Backward Diode with Ultrahigh-Reverse Rectification Ratio

ACS Appl Mater Interfaces. 2018 Feb 14;10(6):5657-5664. doi: 10.1021/acsami.7b18242. Epub 2018 Feb 2.

Abstract

Backward diodes conduct more efficiently in the reverse bias than in the forward bias, providing superior high-frequency response, temperature stability, radiation hardness, and 1/f noise performance than a conventional diode conducting in the forward direction. Here, we demonstrate a van der Waals material-based backward diode by exploiting the giant staggered band offsets of WSe2/SnSe2 vertical heterojunction. The diode exhibits an ultrahigh-reverse rectification ratio (R) of ∼2.1 × 104, and the same is maintained up to an unusually large bias of 1.5 V-outperforming existing backward diode reports using conventional bulk semiconductors as well as one- and two-dimensional materials by more than an order of magnitude while maintaining an impressive curvature coefficient (γ) of ∼37 V-1. The transport mechanism in the diode is shown to be efficiently tunable by external gate and drain bias, as well as by the thickness of the WSe2 layer and the type of metal contacts used. These results pave the way for practical electronic circuit applications using two-dimensional materials and their heterojunctions.

Keywords: SnSe2; WSe2; backward diode; charge transport; curvature coefficient; reverse rectification ratio; van der Waals heterostructure.