InAs/AlGaAs quantum dots for single-photon emission in a red spectral range

M V Rakhlin; K G Belyaev; G V Klimko; I S Mukhin; D A Kirilenko; T V Shubina; S V Ivanov; A A Toropov

doi:10.1038/s41598-018-23687-7

InAs/AlGaAs quantum dots for single-photon emission in a red spectral range

Sci Rep. 2018 Mar 28;8(1):5299. doi: 10.1038/s41598-018-23687-7.

Authors

M V Rakhlin¹, K G Belyaev², G V Klimko², I S Mukhin^{3

4}, D A Kirilenko², T V Shubina², S V Ivanov², A A Toropov²

Affiliations

¹ Ioffe Institute, 26 Politekhnicheskaya str., St. Petersburg, 194021, Russia. maximrakhlin@mail.ru.
² Ioffe Institute, 26 Politekhnicheskaya str., St. Petersburg, 194021, Russia.
³ St. Petersburg Academic University RAS, 8/3 Khlopina str., St. Petersburg, 194021, Russia.
⁴ ITMO University, 49 Kronversky pr., St. Petersburg, 197101, Russia.

Abstract

We report on comparative optical studies of InAs/Al_0.44Ga_0.56As quantum dots (QDs) grown by molecular beam epitaxy either with or without a thin GaAs interlayer inserted between the AlGaAs barrier and InAs QDs. Emission properties of individual QDs are investigated by micro-photoluminescence spectroscopy using 500-nm-size etched cylindric mesa structures. The single-photon statistics of the QDs of both types, emitting in the red spectral range between 636 and 750 nm, is confirmed by the measurements of the second-order correlation function. A negligibly small exciton fine structure splitting is detected in the majority of the QDs grown with the GaAs interlayer that implies the possibility of generating pairs of entangled photons with high entanglement fidelity.