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. 2018 Jun 8;11(6):969.
doi: 10.3390/ma11060969.

Thermal Conductivity and High-Frequency Dielectric Properties of Pressureless Sintered SiC-AlN Multiphase Ceramics

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Free PMC article

Thermal Conductivity and High-Frequency Dielectric Properties of Pressureless Sintered SiC-AlN Multiphase Ceramics

Jialin Gu et al. Materials (Basel). .
Free PMC article

Abstract

SiC-AlN multiphase ceramics with 10 wt. %Y₂O₃-BaO-SiO₂ additives were fabricated by pressureless sintering in a nitrogen atmosphere. The effects of SiC contents and sintering temperatures on the sinterability, microstructure, thermal conductivity and high-frequency dielectric properties were characterized. In addition to 6H-SiC and AlN, the samples also contained Y₃Al₅O12 and Y₄Al₂O₉. SiC-AlN ceramics sintered with 50 wt. % SiC at 2173 K exhibited the best thermal diffusivity and thermal conductivity (26.21 mm²·s−1 and 61.02 W·m−1·K−1, respectively). The dielectric constant and dielectric loss of the sample sintered with 50 wt. % SiC and 2123 K were 33⁻37 and 0.4⁻0.5 at 12.4⁻18 GHz. The dielectric constant and dielectric loss of the samples decreased as the frequency of electromagnetic waves increased from 12.4⁻18 GHz. The dielectric thermal conductivity properties of the SiC-AlN samples are discussed.

Keywords: SiC-AlN; dielectric properties; pressureless sintering; thermal conductivity.

Conflict of interest statement

The authors declare no conflict of interest.

Figures

Figure 1
Figure 1
Apparent porosity and bulk density of 50 wt. %SiC-40 wt. %AlN multiphase ceramics with 4–8 wt. %Y2O3-1.12 wt. %BaO-0.88 wt. %SiO2 sintering additive.
Figure 2
Figure 2
Relative density of the SiC-AlN ceramics. (a) Different SiC contents; (b) different sintering temperatures.
Figure 3
Figure 3
XRD patterns of SiC-AlN ceramics with different SiC contents.
Figure 4
Figure 4
SEM images of the SiC-AlN ceramics with different SiC contents: (a) 40 wt. %; (b) 45 wt. %; (c) 50 wt. %; (d) 55 wt. %; (e) 60 wt. %. Circles and arrows mark the pore region.
Figure 4
Figure 4
SEM images of the SiC-AlN ceramics with different SiC contents: (a) 40 wt. %; (b) 45 wt. %; (c) 50 wt. %; (d) 55 wt. %; (e) 60 wt. %. Circles and arrows mark the pore region.
Figure 5
Figure 5
Thermal properties of SiC-AlN ceramics: (a) different SiC contents; (b) different sintering temperature.
Figure 6
Figure 6
Dielectric properties of SiC-AlN ceramics with different SiC contents at high frequencies: (a) relative dielectric constant; (b) dielectric loss.
Figure 7
Figure 7
Dielectric properties of SiC-AlN ceramics with different sintering temperature at high frequencies: (a) relative dielectric constant; (b) dielectric loss.

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