One Million Percent Tunnel Magnetoresistance in a Magnetic van der Waals Heterostructure

Nano Lett. 2018 Aug 8;18(8):4885-4890. doi: 10.1021/acs.nanolett.8b01552. Epub 2018 Jul 17.


We report the observation of a very large negative magnetoresistance effect in a van der Waals tunnel junction incorporating a thin magnetic semiconductor, CrI3, as the active layer. At constant voltage bias, current increases by nearly one million percent upon application of a 2 T field. The effect arises from a change between antiparallel to parallel alignment of spins across the different CrI3 layers. Our results elucidate the nature of the magnetic state in ultrathin CrI3 and present new opportunities for spintronics based on two-dimensional materials.

Keywords: 2D magnetism; chromium triiodide; spin filter; tunnel magnetoresistance.

Publication types

  • Research Support, Non-U.S. Gov't