Phase-Engineering-Driven Enhanced Electronic and Optoelectronic Performance of Multilayer In2Se3 Nanosheets

Wei Feng; Feng Gao; Yunxia Hu; Mingjin Dai; He Liu; Lifeng Wang; PingAn Hu

doi:10.1021/acsami.8b10194

Phase-Engineering-Driven Enhanced Electronic and Optoelectronic Performance of Multilayer In₂Se₃ Nanosheets

ACS Appl Mater Interfaces. 2018 Aug 22;10(33):27584-27588. doi: 10.1021/acsami.8b10194. Epub 2018 Aug 8.

Authors

Wei Feng¹, Feng Gao², Yunxia Hu², Mingjin Dai², He Liu¹, Lifeng Wang³, PingAn Hu²

Affiliations

¹ Department of Chemistry and Chemical Engineering, College of Science , Northeast Forestry University , Harbin 150040 , China.
² Key Lab of Microsystem and Microstructure of Ministry of Education , Harbin Institute of Technology , Harbin 150080 , China.
³ Institute for Frontier Materials , Deakin University , 75 Pigdons Road, Waurn Ponds , Geelong , Victoria 3216 , Australia.

PMID: 30080027
DOI: 10.1021/acsami.8b10194

Abstract

Here, we report electronic and optoelectronic performance of multilayer In₂Se₃ are effectively regulated by phase engineering. The electron mobility is increased to 22.8 cm² V^-1 s^-1 for β-In₂Se₃ FETs, which is 18 times higher than 1.26 cm² V^-1 s^-1 of α-In₂Se₃ FETs. The enhanced electronic performance is attributed to larger carrier sheet density and lower contact resistance. Multilayer β-In₂Se₃ photodetector exhibits an ultrahigh responsivity of 8.8 × 10⁴ A/W under 800 nm illumination, which is 574 times larger than 154.4 A/W of α-In₂Se₃ photodetector. Our results demonstrate phase-engineering is a valid way to tune and further optimize electronic and optoelectronic performance of multilayer In₂Se₃ nanodevices.

Keywords: In2Se3; field-effect transistors; phase-engineering; photodetectors; thermal-annealing.