Solar-to-electricity conversion efficiency, power conversion efficiency (PCE), and stability are two important aspects of perovskite solar cells (PSCs). However, both aspects are difficult to simultaneously enhance. In the recent two years, two-dimensional (2D)/three-dimensional (3D) stacking structure, designed by covering the 3D perovskite with a thin 2D perovskite capping layer, was reported to be a promising method to achieve both a higher PCE and improved stability simultaneously. However, when reducing the surface defects of 3D perovskite, the thin 2D capping layer itself may probably introduce additional interfacial defects in a 2D/3D stacking structure, which is thought to be able to trigger trap-assisted nonradiative recombination or ion migration. Thus, efforts should be paid to reduce the interfacial defects of 2D hybrid perovskite when serving as a modification layer in a 2D/3D stacking structure PSCs. Here, we demonstrate that bromine (Br) doping of the 2D perovskite capping layer is an efficient strategy to passivate interfacial defects robustly, by which the photoluminescence lifetime is enhanced notably, whereas the interfacial charge recombination is suppressed a lot. As a result, the PCE is enhanced from 18.01% (3D perovskite) to 20.07% (Br-doped 2D/3D perovskite) along with improved moisture stability.
Keywords: 2D/3D stacking structure; charge recombination; doping; interfacial defect; perovskite solar cell.