Self-Assembled Networked PbS Distribution Quantum Dots for Resistive Switching and Artificial Synapse Performance Boost of Memristors

Xiaobing Yan; Yifei Pei; Huawei Chen; Jianhui Zhao; Zhenyu Zhou; Hong Wang; Lei Zhang; Jingjuan Wang; Xiaoyan Li; Cuiya Qin; Gong Wang; Zuoao Xiao; Qianlong Zhao; Kaiyang Wang; Hui Li; Deliang Ren; Qi Liu; Hao Zhou; Jingsheng Chen; Peng Zhou

doi:10.1002/adma.201805284

Self-Assembled Networked PbS Distribution Quantum Dots for Resistive Switching and Artificial Synapse Performance Boost of Memristors

Adv Mater. 2019 Feb;31(7):e1805284. doi: 10.1002/adma.201805284. Epub 2018 Dec 27.

Authors

Xiaobing Yan^{1

2}, Yifei Pei¹, Huawei Chen³, Jianhui Zhao¹, Zhenyu Zhou¹, Hong Wang¹, Lei Zhang¹, Jingjuan Wang¹, Xiaoyan Li¹, Cuiya Qin¹, Gong Wang¹, Zuoao Xiao¹, Qianlong Zhao¹, Kaiyang Wang¹, Hui Li¹, Deliang Ren¹, Qi Liu⁴, Hao Zhou⁵, Jingsheng Chen², Peng Zhou³

Affiliations

¹ National-Local Joint Engineering Laboratory of New Energy Photovoltaic Devices, Key Laboratory of Digital Medical Engineering of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding, 071002, P. R. China.
² Department of Materials Science and Engineering, National University of Singapore, Singapore, 117576, Singapore.
³ State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
⁴ Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
⁵ Giantec Semiconductor, Inc., Shanghai, 201203, China.

PMID: 30589113
DOI: 10.1002/adma.201805284

Abstract

With the advent of the era of big data, resistive random access memory (RRAM) has become one of the most promising nanoscale memristor devices (MDs) for storing huge amounts of information. However, the switching voltage of the RRAM MDs shows a very broad distribution due to the random formation of the conductive filaments. Here, self-assembled lead sulfide (PbS) quantum dots (QDs) are used to improve the uniformity of switching parameters of RRAM, which is very simple comparing with other methods. The resistive switching (RS) properties of the MD with the self-assembled PbS QDs exhibit better performance than those of MDs with pure-Ga₂ O₃ and randomly distributed PbS QDs, such as a reduced threshold voltage, uniformly distributed SET and RESET voltages, robust retention, fast response time, and low power consumption. This enhanced performance may be attributed to the ordered arrangement of the PbS QDs in the self-assembled PbS QDs which can efficiently guide the growth direction for the conducting filaments. Moreover, biosynaptic functions and plasticity, are implemented successfully in the MD with the self-assembled PbS QDs. This work offers a new method of improving memristor performance, which can significantly expand existing applications and facilitate the development of artificial neural systems.

Keywords: data storage; quantum dots; resistive switching; self-assembled PbS; synapses.

Abstract

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