As a newly-developed two-dimensional (2D) material of group-IVA, few-layer silicon (Si) nanosheets were prepared by the liquid phase exfoliation (LPE) method. Its non-linear saturable adsorption property was investigated by 532 and 1064 nm nanosecond lasers. Using Si nanosheets as the saturable absorber (SA), passive Q-switched all-solid-state lasers were demonstrated for the first time. For different laser emissions of Nd3+ at 0.9, 1.06, and 1.34 µm, the narrowest Q-switched pulse widths were 200.2, 103.7, and 110.4 ns, corresponding to the highest peak powers of 2.76, 2.15, and 1.26 W. The results provide a promising SA for solid-state pulsed lasers and broaden the potential application range of Si nanosheets in ultrafast photonics and optoelectronics.
Keywords: 2D material; Si nanosheets; passively Q-switched; solid-state laser.