Metallic elements can contaminate single crystal silicon mirror during ion beam etching (IBE) and other postprocessing methods, which can affect the performance of components in an infrared laser system. In this work, scanning electron microscope (SEM) and atomic force microscope (AFM) were used to characterize the distribution of contaminant represented by aluminum (Al). After characterizing contaminated area, elastic jet polishing (EJP), EJP, and static alkaline etching (SAE) combined technique were used to process the mirror. The morphology and laser-induced absorption were measured. Results show that metallic elements can mix with silicon and generate bulges due to the sputtering effect. In addition, SAE and EJP combined technique can remove metallic contaminant and stabilize the surface quality. Research results can be a reference on conducting postprocessing technologies to improve laser damage resistance property of single crystal silicon mirror in infrared laser system.
Keywords: EJP; SAE; infrared laser system; metallic contaminant; single crystal silicon; surface quality.