Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE

Materials (Basel). 2019 Aug 1;12(15):2455. doi: 10.3390/ma12152455.


Carbon, a compensator in GaN, is an inherent part of the organometallic vapor phase epitaxy (OMVPE) environment due to the use of organometallic sources. In this study, the impact of growth conditions are explored on the incorporation of carbon in GaN prepared via OMVPE on pseudo-bulk GaN wafers (in several cases, identical growths were performed on GaN-on-Al2O3 templates for comparison purposes). Growth conditions with different growth efficiencies but identical ammonia molar flows, when normalized for growth rate, resulted in identical carbon incorporation. It is concluded that only trimethylgallium which contributes to growth of the GaN layer contributes to carbon incorporation. Carbon incorporation was found to decrease proportionally with increasing ammonia molar flow, when normalized for growth rate. Ammonia molar flow divided by growth rate is proposed as a reactor independent predictor of carbon incorporation as opposed to the often-reported input V/III ratio. A low carbon concentration of 7.3 × 1014 atoms/cm3 (prepared at a growth rate of 0.57 µm/h) was obtained by optimizing growth conditions for GaN grown on pseudo-bulk GaN substrates.

Keywords: GaN-on-GaN homoepitaxy; III-nitride semiconductors; carbon incorporation; electronic compensation; materials characterization; metal–organic chemical vapor deposition; organometallic vapor phase epitaxy; secondary ion mass spectroscopy.