Cesium-Doped Vanadium Oxide as the Hole Extraction Layer for Efficient Perovskite Solar Cells

Xiang Yao; Jun Qi; Wenzhan Xu; Xiaofang Jiang; Xiong Gong; Yong Cao

doi:10.1021/acsomega.7b01944

Cesium-Doped Vanadium Oxide as the Hole Extraction Layer for Efficient Perovskite Solar Cells

ACS Omega. 2018 Jan 26;3(1):1117-1125. doi: 10.1021/acsomega.7b01944. eCollection 2018 Jan 31.

Authors

Xiang Yao¹, Jun Qi¹, Wenzhan Xu¹, Xiaofang Jiang¹, Xiong Gong^{1

2}, Yong Cao¹

Affiliations

¹ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou 510640, P. R. China.
² Department of Polymer Engineering, College of Polymer Science and Polymer Engineering, The University of Akron, Akron, Ohio 44325, United States.

Abstract

In this study, we report the utilization of low-temperature solution-processed Cs-doped VO_X thin films as the hole extraction layers (HELs) in perovskite solar cells (PSCs). It is found that the VO_X:yCs (where y is the mole ratio of Cs versus V and y = 0.1, 0.3, and 0.5) thin films possess better electrical conductivities than that of the pristine VO_X thin film. As a result, the PSCs incorporated with the VO_X:yCs HEL exhibit large fill factors and high short-circuit currents, with consequently high power conversion efficiencies, which is more than 30% enhancement as compared with pristine VO_X HEL. Our studies provide a facial way to enhance the electrical conductivity of the hole extraction layer for boosting device performance of perovskite solar cells.