We have investigated substitution effects of Ni, Pt, and Pd on phase formation and magnetic properties of D022-Mn3Ge thin films. We prepared (Mn1-x M x )3Ge thin films (M = Ni, Pt, Pd) at 650 °C by magnetron sputtering on MgO(0 0 1) substrates with x varying from 0.03 to 0.6. For improving the film quality, a Cr(0 0 1) seed layer was employed. The D022 structure formed only for the lowest concentrations of Ni and Pt. Nevertheless, the doped samples showed strong perpendicular magnetic anisotropy up to x = 0.1. For high Ni concentrations, we observed the formation of a soft ferromagnetic Mn x Ni y Ge phase with a Curie temperature of about 230 K, while in samples with high Pt content the antiferromagnet L10-MnPt phase is formed along with GePt. In contrast, for Pd substitution, the D022 structure is preserved up to x = 0.2, exhibiting strong perpendicular magnetic anisotropy and low saturation magnetization. Interestingly, the coexistence of the D022-Mn3Ge and a novel D022-(Mn1-x Pd x )3Ge phase was revealed, which might have been facilitated by the low lattice mismatch to the Cr(0 0 1) seed layer. With further increase of the Pd concentration, the D022 structure vanishes and mainly the GePd and GePd2 phases are present. Overall within the investigated sample series, the saturation magnetization strongly decreases with increasing dopant concentration, offering the possibility to adjust the saturation magnetization in the range between 20 and 100 emu cm-3, while still preserving strong perpendicular magnetic anisotropy, which is important for spintronic applications.