The vacuum arc ion source for indium and tin ions implantation into phase change memory thin films

Dmitry Seleznev; Alexander Kozlov; Timur Kulevoy; Alexey Sitnikov; Petr Lazarenko; Yuri Vorobyov; Mikhail Smayev; Alexey Yakubov; Alexey Sherchenkov; Sergey Kozyukhin

doi:10.1063/1.5128561

The vacuum arc ion source for indium and tin ions implantation into phase change memory thin films

Rev Sci Instrum. 2019 Dec 1;90(12):123313. doi: 10.1063/1.5128561.

Affiliations

¹ National Research Center "Kurchatov Institute"-ITEP, 117218 Moscow, Russia.
² National Research University of Electronic Technology, 124498 Zelenograd, Russia.
³ Ryazan State Radio Engineering University, 390005 Ryazan, Russia.
⁴ Mendeleev University of Chemical Technology of Russia, 125047 Moscow, Russia.
⁵ Kurnakov Institute of General and Inorganic Chemistry of RAS, 119991 Moscow, Russia.

PMID: 31893855
DOI: 10.1063/1.5128561

Abstract

One of the most prospective electrical and optical nonvolatile memory types is the phase change memory based on chalcogenide materials, particularly Ge₂Sb₂Te₅. Introduction of dopants is an effective method for the purposeful change of Ge₂Sb₂Te₅ thin film properties. In this work, we used the ion implantation method for the introduction of In and Sn into Ge₂Sb₂Te₅ thin films by a Multipurpose Test Bench (MTB) at the National Research Center "Kurchatov Institute"-Institute for Theoretical and Experimental Physics. For Sn and In ion implantation into Ge₂Sb₂Te₅, the following MTB elements were used: a vacuum arc ion source, an electrostatic focusing system, and a system for current and beam profile measurements. The MTB parameters for Sn and In ion implantation and its effect on the material properties are presented. Implanted Ge₂Sb₂Te₅ thin films were irradiated by femtosecond laser pulses. It was shown that the ion implantation resulted in a decrease in the threshold laser fluence necessary for crystallization compared to the undoped Ge₂Sb₂Te₅.