Thiophene-Based Two-Dimensional Dion-Jacobson Perovskite Solar Cells with over 15% Efficiency

Di Lu; Guangwei Lv; Zhiyuan Xu; Yixin Dong; Xiaofei Ji; Yongsheng Liu

doi:10.1021/jacs.0c03363

Thiophene-Based Two-Dimensional Dion-Jacobson Perovskite Solar Cells with over 15% Efficiency

J Am Chem Soc. 2020 Jun 24;142(25):11114-11122. doi: 10.1021/jacs.0c03363. Epub 2020 Jun 12.

Authors

Di Lu¹, Guangwei Lv¹, Zhiyuan Xu¹, Yixin Dong¹, Xiaofei Ji¹, Yongsheng Liu^{1

2}

Affiliations

¹ The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry, Nankai University, Tianjin 300071, China.
² Renewable Energy Conversion and Storage Center (RECAST), Nankai University, Tianjin 300071, China.

PMID: 32478512
DOI: 10.1021/jacs.0c03363

Abstract

Two-dimensional (2D) perovskites are emerging photovoltaic materials because of their highly tunable photophysical properties and improved environmental stability in comparison with 3D perovskites. Here, a thiophene-based bulky dication spacer, namely, 2,5-thiophenedimethylammonium (ThDMA), was developed and applicated in 2D Dion-Jacobson (DJ) perovskite. High-quality 2D DJ perovskite, (ThDMA)(MA)_n-1Pb_nI_3n+1 (nominal n = 5), with improved crystallinity, preferred vertical orientation, and enlarged spatially resolved carrier lifetime could be achieved by a one-step method using a mixed solvent of DMF/DMSO (v/v, 9:1). The optimized device exhibits a high efficiency of 15.75%, which is a record for aromatic spacer-based 2D DJ perovskite solar cells (PSCs). Moreover, the unencapsulated 2D DJ perovskite devices sustained over 95% of their original efficiency after storage in N₂ for 1655 h. Importantly, both the light-soaking stability and thermal stability (T = 80 °C) of the 2D DJ perovksite devices are dramatically improved in comparison with their 3D counterparts. These results indicate that highly efficient and stable 2D DJ PSCs could be achieved by developing thiophene-based aromatic spacers as well as device engineering.