Well-aligned, lateral and vertical oriented nanoporous GaN was fabricated using the electrochemical etching procedure and its influence on the optical characteristics of ultraviolet-A multiple quantum well (MQW) structure was investigated. We used a MQW structure with a V-defect and n-Al0.1Ga0.9 N layer, which greatly improved the uniformity of vertical electrochemical etching. Compared to the as-grown MQW structure, the lateral and vertical oriented nanoporous MQW structures have 3.8-fold and 8.1-fold photoluminescence intensity enhancement and the full width at half maximum has been narrowed from 18.4 nm to 7.9 nm and 2.8 nm, respectively. The vertical oriented nanoporous MQW structure has a rectangular far-field emission pattern with uniform forward light distribution and the view angle of 85% intensity is 50°. This study provides an effective method for improving the light output and controlling the emission angle of GaN based light emitting devices, as well as a method for preparing well-aligned nanopores in semiconductors.