In situ TiCp was fabricated via combustion synthesis in an Al-Ti-C system. The quality of copper plating was easily observable on the surface of spherical in situ TiCp. A study was conducted to assess the influences of the stirring method, plating temperature and particle-to-solution ratio. According to the results, magnetic stirring is an advantageous stirring method. During the plating process, the plating quality reaches the maximum level at 303 K under magnetic stirring. Moreover, uniform and dense plating is achieved when the particle-to-solution ratio reaches 1 g/100 ml. The concentration of solution and ion activity can affect the speed at which Cu2+ is attached to the growing core, which plays a significant role in the quality of copper plating.