Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors

Mircea Dragoman; Adrian Dinescu; Florin Nastase; Daniela Dragoman

doi:10.3390/nano10071404

Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors

Nanomaterials (Basel). 2020 Jul 19;10(7):1404. doi: 10.3390/nano10071404.

Authors

Mircea Dragoman¹, Adrian Dinescu¹, Florin Nastase¹, Daniela Dragoman^{2

3}

Affiliations

¹ National Institute for Research and Development in Microtechnology (IMT), Str. Erou Iancu Nicolae 126 A, 077191 Voluntari, Romania.
² Physics Faculty, University of Bucharest, P.O. Box MG-11, 077125 Bucharest, Romania.
³ Academy of Romanian Scientists, Str. Ilfov, Nr. 3, 050044 Bucharest, Romania.

Abstract

The ultimate memristor, which acts as resistive memory and an artificial neural synapse, is made from a single atomic layer. In this manuscript, we present experimental evidence of the memristive properties of a nanopatterned ferroelectric graphene field-effect transistor (FET). The graphene FET has, as a channel, a graphene monolayer transferred onto an HfO₂-based ferroelectric material, the channel being nanopatterned with an array of holes with a diameter of 20 nm.

Keywords: HfO2-based ferroelectrics; graphene; memtransistors.

Grants and funding

PN-III-P4-ID-PCCF-2016-0033 "Grapheneferro"/Unitatea Executiva pentru Finantarea Invatamantului Superior, a Cercetarii, Dezvoltarii si Inovarii