Room-temperature processed high-quality SnO2 films by oxygen plasma activated e-beam evaporation

Jiankang Li; Lutao Li; Weiyuan Chen; Qinghua Yi; Guifu Zou

doi:10.1088/1361-6528/abbce9

Room-temperature processed high-quality SnO₂ films by oxygen plasma activated e-beam evaporation

Nanotechnology. 2021 Jan 8;32(2):025606. doi: 10.1088/1361-6528/abbce9.

Authors

Jiankang Li¹, Lutao Li², Weiyuan Chen¹, Qinghua Yi³, Guifu Zou²

Affiliations

¹ Institute of Electronic Information Engineering, Suzhou Vocational University, Suzhou 215014, People's Republic of China.
² College of Energy, Soochow Institute for Energy and Materials Innovations and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215000, People's Republic of China.
³ College of Physics and Engineering, Changshu Institute of Technology and Jiangsu Laboratory of Ad-vanced Functional Materials, Changshu 215500, People's Republic of China.

PMID: 32998117
DOI: 10.1088/1361-6528/abbce9

Abstract

Recently, SnO₂ is considered to be one of the most promising materials as electron transport layer in perovskite solar cells (PSCs). Low-temperature processed SnO₂ films are crucial for SnO₂-based PSCs and flexible devices. However, it is difficult to prepare stoichiometric SnO₂ films by e-beam evaporation at low-temperature. Herein, SnO₂ films are fabricated by oxygen plasma activated e-beam evaporation technique at room-temperature. Oxygen plasma shows strong oxidation activity, which is essential to adjust the stoichiometry of SnO _x in the evaporation process. The SnO₂ films exhibit uniformity (R _q = 3.05 nm), high transmittance (T > 90%), high hall mobility (μ _e = 10.8 cm² V ^-1 s^-1) and good hydrophilic (water contact angle =19°). This work will promote the application of SnO₂ films in PSCs and flexible devices.