New opportunities in the development and commercialization of novel photonic and electronic devices can be opened following the development of technology-compatible arbitrary-shaped ferroelectrics encapsulated in a passive environment. Here, we report and experimentally demonstrate nanoscale tailoring of ferroelectricity by an arbitrary pattern within the nonferroelectric thin film. For inducing the ferroelectric nanoregions in the nonferroelectric surrounding, we developed a technology-compatible approach of local doping of a thin (10 nm) HfO2 film by Ga ions right in the thin-film capacitor device via focused ion beam implantation. Local crystallization of the doped regions to the ferroelectric structural phase occurs during subsequent annealing. The remnant polarization of the HfO2:Ga regions reached 13 μC/cm2 at a Ga concentration of 0.6 at. %. Piezoresponse force microscopy over the capacitor device revealed an asymmetrical switching of ferroelectric domains within written HfO2:Ga patterns after capacitor switching, which was attributed to the mechanical stress across the doped film. The lateral spatial resolution of ferroelectricity tailoring is found to be ∼200 nm, which enables diverse applications in switchable photonics and microelectronic memories.
Keywords: ferroelectric hafnium oxide; focused ion beam; nanoscale doping; nanoscale ferroelectricity; piezoresponse force microscopy; thin-film capacitor.