Sensitivity Analysis of Biosensors Based on a Dielectric-Modulated L-Shaped Gate Field-Effect Transistor

Chen Chong; Hongxia Liu; Shulong Wang; Shupeng Chen; Haiwu Xie

doi:10.3390/mi12010019

Sensitivity Analysis of Biosensors Based on a Dielectric-Modulated L-Shaped Gate Field-Effect Transistor

Micromachines (Basel). 2020 Dec 27;12(1):19. doi: 10.3390/mi12010019.

Authors

Chen Chong¹, Hongxia Liu¹, Shulong Wang¹, Shupeng Chen¹, Haiwu Xie¹

Affiliation

¹ Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi'an 710071, China.

Abstract

Label-free biomolecular sensors have been widely studied due to their simple operation. L-shaped tunneling field-effect transistors (LTFETs) are used in biosensors due to their low subthreshold swing, off-state current, and power consumption. In a dielectric-modulated LTFET (DM-LTFET), a cavity is trenched under the gate electrode in the vertical direction and filled with biomolecules to realize the function of the sensor. A 2D simulator was utilized to study the sensitivity of a DM-LTFET sensor. The simulation results show that the current sensitivity of the proposed structure could be as high as 2321, the threshold voltage sensitivity could reach 0.4, and the subthreshold swing sensitivity could reach 0.7. This shows that the DM-LTFET sensor is suitable for a high-sensitivity, low-power-consumption sensor field.

Keywords: biosensor; dielectric-modulated L-shaped tunneling field-effect transistor (DM-LTFET); sensitivity.

Abstract

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