Electron energy loss spectroscopy and first-principles study of GaN via Zn doping

Micron. 2021 Apr;143:103012. doi: 10.1016/j.micron.2021.103012. Epub 2021 Jan 23.

Abstract

The electronic structure of GaN and GaN:Zn was investigated by electron energy loss spectroscopy and first-principles calculations. In the low-loss spectrum, the interband transitions are assigned to the observed energy loss peaks. After Zn doping, impurity levels are introduced to the density of states and hybrid orbitals of N 2p and Zn 3d are formed around the Fermi level. In the nitrogen K-edge, an additional peak was observed due to the formation of donor defect states. A core-hole effect is believed to be significant for simulation of the N K-edge for both GaN and GaN:Zn.

Keywords: Electron energy loss spectrum; Electronic structure; GaN:Zn; Microstructure.