Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer

Phu T P Le; Johan E Ten Elshof; Gertjan Koster

doi:10.1038/s41598-021-91848-2

Epitaxial lift-off of freestanding (011) and (111) SrRuO₃ thin films using a water sacrificial layer

Sci Rep. 2021 Jun 14;11(1):12435. doi: 10.1038/s41598-021-91848-2.

Authors

Phu T P Le¹, Johan E Ten Elshof¹, Gertjan Koster²

Affiliations

¹ MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede, The Netherlands.
² MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede, The Netherlands. g.koster@utwente.nl.

Abstract

Two-dimensional freestanding thin films of single crystalline oxide perovskites are expected to have great potential in integration of new features to the current Si-based technology. Here, we showed the ability to create freestanding single crystalline (011)- and (111)-oriented SrRuO₃ thin films using Sr₃Al₂O₆ water-sacrificial layer. The epitaxial Sr₃Al₂O₆(011) and Sr₃Al₂O₆(111) layers were realized on SrTiO₃(011) and SrTiO₃(111), respectively. Subsequently, SrRuO₃ films were epitaxially grown on these sacrificial layers. The freestanding single crystalline SrRuO₃(011)_pc and SrRuO₃(111)_pc films were successfully transferred on Si substrates, demonstrating possibilities to transfer desirable oriented oxide perovskite films on Si and arbitrary substrates.