Interfacial engineering of CuFeS2 quantum dots via platinum decoration with enhanced Cr(VI) reduction dynamics under UV-Vis-NIR radiation

Yangzi Shangguan; Renji Zheng; Qiuyue Ge; Xuezhen Feng; Ranhao Wang; Yuanhao Zhou; Siyuan Luo; Lele Duan; Jia Lin; Hong Chen

doi:10.1016/j.jhazmat.2021.126701

Interfacial engineering of CuFeS₂ quantum dots via platinum decoration with enhanced Cr(VI) reduction dynamics under UV-Vis-NIR radiation

J Hazard Mater. 2022 Jan 5:421:126701. doi: 10.1016/j.jhazmat.2021.126701. Epub 2021 Jul 21.

Authors

Yangzi Shangguan¹, Renji Zheng², Qiuyue Ge¹, Xuezhen Feng², Ranhao Wang², Yuanhao Zhou², Siyuan Luo², Lele Duan³, Jia Lin⁴, Hong Chen⁵

Affiliations

¹ State Environmental Protection Key Laboratory of Integrated Surface Water-Groundwater Pollution Control, Guangdong Provincial Key Laboratory of Soil and Groundwater Pollution Control, Shenzhen Key Laboratory of Interfacial Science and Engineering of Materials, School of Environmental Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China; Department of Physics, Shanghai Key Laboratory of Materials Protection and Advanced Materials in Electric Power, Shanghai University of Electric Power, Shanghai 200090, China.
² State Environmental Protection Key Laboratory of Integrated Surface Water-Groundwater Pollution Control, Guangdong Provincial Key Laboratory of Soil and Groundwater Pollution Control, Shenzhen Key Laboratory of Interfacial Science and Engineering of Materials, School of Environmental Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
³ Department of Chemistry, Southern University of Science and Technology, Shenzhen 518055, China.
⁴ Department of Physics, Shanghai Key Laboratory of Materials Protection and Advanced Materials in Electric Power, Shanghai University of Electric Power, Shanghai 200090, China.
⁵ State Environmental Protection Key Laboratory of Integrated Surface Water-Groundwater Pollution Control, Guangdong Provincial Key Laboratory of Soil and Groundwater Pollution Control, Shenzhen Key Laboratory of Interfacial Science and Engineering of Materials, School of Environmental Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China. Electronic address: chenh3@sustech.edu.cn.

PMID: 34339984
DOI: 10.1016/j.jhazmat.2021.126701

Abstract

Configuring reactive and stable catalytic interfaces is crucial to design efficient photocatalysts for Cr(VI) reduction. Herein, via the platinum decoration approach based on interfacial engineering, we developed an effective catalytic interface within novel semiconducting chalcopyrite quantum dots (Pt/CuFeS₂ QDs). Benefiting from the catalytic merits of the Pt modulated interfacial structure and electronic structure, Pt/CuFeS₂ QDs show a broader light absorption capability extending to near-infrared radiation (NIR) range with superior carriers separation performance and faster charge transfer efficiency, which delivers a three-folder faster photocatalytic Cr(VI) reduction efficiency comparing to the original CuFeS₂ QDs. Density functional theory (DFT) calculations unravel that Pt atoms prefer to be anchored with the surface S atoms to form a stable interfacial structure with faster electron transfer and Cr(VI) reduction dynamics. This work demonstrates that platinum decoration based on interfacial engineering is an effective strategy to simultaneously modulate the band structure and accelerate the interfacial reaction dynamics for semiconductor photocatalysts, which paves the way for designing highly efficient photocatalysts for light-driven environmental and energy engineering applications.

Keywords: Cr(VI) reduction; Interfacial engineering; Photocatalysts; UV-Vis-NIR.