Ultrathin non-doped thermally activated delayed fluorescence emitting layer for highly efficient OLEDs

Gyana Prakash Nanda; Bahadur Sk; Nisha Yadav; Suresh Rajamanickam; Upasana Deori; Rahul Mahashaya; Eli Zysman-Colman; Pachaiyappan Rajamalli

doi:10.1039/d1cc04972k

Ultrathin non-doped thermally activated delayed fluorescence emitting layer for highly efficient OLEDs

Chem Commun (Camb). 2021 Dec 16;57(100):13728-13731. doi: 10.1039/d1cc04972k.

Authors

Gyana Prakash Nanda¹, Bahadur Sk¹, Nisha Yadav¹, Suresh Rajamanickam¹, Upasana Deori¹, Rahul Mahashaya¹, Eli Zysman-Colman², Pachaiyappan Rajamalli¹

Affiliations

¹ Materials Research Centre, Indian Institute of Science, Bangalore-560012, Karnataka, India. rajamalli@iisc.ac.in.
² Organic Semiconductor Centre, EaStCHEM School of Chemistry, University of St Andrews, St Andrews, UK. eli.zysman-colman@st-andrews.ac.uk.

PMID: 34870289
DOI: 10.1039/d1cc04972k

Abstract

We report highly efficient, ultrathin non-doped green and bluish-green organic light-emitting diodes (OLEDs) using a thermally activated delayed fluorescence (TADF) emitter. The green OLED with an ultrathin (∼1 nm) EML showed a 2.6-fold higher external quantum efficiency (EQE_max) of 13.5% with a luminance of 17 250 cd m^-2 than the conventional (30 nm) non-doped device.