Low-Dimensional In2Se3 Compounds: From Material Preparations to Device Applications

Junye Li; Handong Li; Xiaobin Niu; Zhiming Wang

doi:10.1021/acsnano.1c03836

Low-Dimensional In₂Se₃ Compounds: From Material Preparations to Device Applications

ACS Nano. 2021 Dec 28;15(12):18683-18707. doi: 10.1021/acsnano.1c03836. Epub 2021 Dec 6.

Authors

Junye Li¹, Handong Li¹, Xiaobin Niu¹, Zhiming Wang²

Affiliations

¹ School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China.
² Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China.

PMID: 34870407
DOI: 10.1021/acsnano.1c03836

Abstract

Nanostructured In₂Se₃ compounds have been widely used in electronics, optoelectronics, and thermoelectrics. Recently, the revelation of ferroelectricity in low-dimensional (low-D) In₂Se₃ has caused a new upsurge of scientific interest in nanostructured In₂Se₃ and advanced functional devices. The ferroelectric, thermoelectric, and optoelectronic properties of In₂Se₃ are highly correlated with the crystal structure. In this review, we summarize the crystal structures and electronic band structures of the widely interested members of the In₂Se₃ compound family. Recent achievements in the preparation of low-D In₂Se₃ with controlled phases are discussed in detail. General principles for obtaining pure-phased In₂Se₃ nanostructures are described. The excellent ferroelectric, optoelectronic, and thermoelectric properties having been demonstrated using nanostructured and heterostructured In₂Se₃ with different phases are also summarized. Progress and challenges on the applications of In₂Se₃ nanostructures in nonvolatile memories, photodetectors, gas sensors, strain sensors, and photovoltaics are discussed in detail. In the last part of this review, perspectives on the challenges and opportunities in the preparation and applications of In₂Se₃ materials are presented.

Keywords: ferroelectricity; low-dimensional In2Se3; material preparations; nonvolatile memories; optoelectronic properties; phase transformation; photodetectors; sensors; thermoelectric properties.