Effects of PEDOT:PSS:GO composite hole transport layer on the luminescence of perovskite light-emitting diodes

Yuanming Zhou; Sijiong Mei; Junjie Feng; Dongwei Sun; Fei Mei; Jinxia Xu; Xianan Cao

doi:10.1039/d0ra04425c

Effects of PEDOT:PSS:GO composite hole transport layer on the luminescence of perovskite light-emitting diodes

RSC Adv. 2020 Jul 15;10(44):26381-26387. doi: 10.1039/d0ra04425c. eCollection 2020 Jul 9.

Authors

Yuanming Zhou^{1

2}, Sijiong Mei¹, Junjie Feng¹, Dongwei Sun¹, Fei Mei^{1

2}, Jinxia Xu^{1

2}, Xianan Cao³

Affiliations

¹ Hubei Key Laboratory for High-efficiency Use of Solar Energy and Operation Control of Energy Storage System, Hubei University of Technology Wuhan 430068 China zhouym@mail.hbut.edu.cn meifei777@163.com.
² School of Science, Hubei University of Technology Wuhan 430068 China.
³ Department of Computer Science and Electrical Engineering, West Virginia University Morgantown WV 26506 USA.

Abstract

Perovskite light-emitting diodes (PeLEDs) employing CH₃NH₃PbBr₃ as the emission layer (EML) and graphene oxide (GO) doped PEDOT:PSS as the hole transport layer (HTL) were prepared and characterized. GO doped in PEDOT:PSS can lead to the increased work function of HTL and lower the hole injection barrier at the HTL/CH₃NH₃PbBr₃ interface, which facilitates the hole injection. Meanwhile, the optimized GO amount in PEDOT:PSS can help to reduce the quenching of luminescence occurring at the interface between HTL and perovskite. The luminance and current efficiency reach the maximum values of 3302 cd m^-2 and 1.92 cd A^-1 in PeLED with an optimized GO ratio (0.3), which increase by 43.3% and 73.0% in comparison with the undoped device, respectively. The enhanced luminescence of PeLEDs was caused by the combined effects of enhanced hole injection efficiency and the suppressed exciton quenching occurring at the HTL/EML interface. These results indicate that the introduction of traditional two-dimensional materials is a reasonable method for designing the structure of PeLEDs.