A compact high-power germanium photodetector (Ge PD) is experimentally demonstrated by re-engineering light distribution in the absorber. Compared with a conventional Ge PD, the proposed structure shows a DC saturation photocurrent improved by 28.9% and 3 dB bandwidth as high as 49.5 GHz at 0.1 mA. Under the same photocurrent of 10.5 mA, the proposed Ge PD shows a 3 dB bandwidth of 11.1 GHz, which is almost double the conventional Ge PD (5.6 GHz). The 25 Gb/s eye-diagram measurement verifies the improved power handling capability. The compact size and manufacturing simplicity of this structure will enable new applications for integrated silicon photonics.