Selected-Area Fabrication of a Single-Walled Carbon Nanotube Schottky Junction with Tunable Gate Rectification

Ying Wang; Taibin Wang; Hongjie Zhang; Dayan Liu; Jinjie Qian; Ran Du; Hua Xu; Shuchen Zhang; Zhi Yang; Qiuchen Zhao; Yue Hu; Shaoming Huang

doi:10.1021/acs.jpclett.2c02117

Selected-Area Fabrication of a Single-Walled Carbon Nanotube Schottky Junction with Tunable Gate Rectification

J Phys Chem Lett. 2022 Aug 18;13(32):7541-7546. doi: 10.1021/acs.jpclett.2c02117. Epub 2022 Aug 10.

Authors

Ying Wang^{1

2}, Taibin Wang¹, Hongjie Zhang¹, Dayan Liu¹, Jinjie Qian¹, Ran Du³, Hua Xu⁴, Shuchen Zhang⁵, Zhi Yang¹, Qiuchen Zhao⁶, Yue Hu¹, Shaoming Huang^{1

7}

Affiliations

¹ Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325000, P. R. China.
² National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China.
³ School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, P. R. China.
⁴ Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xian 710119, P. R. China.
⁵ Beijing Science and Engineering Center for Nanocarbons, School of Materials Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China.
⁶ State Key Laboratory of Superhard Materials, Jilin University, Changchun, Jilin 132012, P. R. China.
⁷ School of Materials and Energy, Guangzhou Key Laboratory of Low-Dimensional Materials and Energy Storage Devices, Guangdong University of Technology, Guangzhou 510006, P. R. China.

PMID: 35947432
DOI: 10.1021/acs.jpclett.2c02117

Abstract

Single-walled carbon nanotube (SWNT)-based devices are expected to play an important role in the next generation of electronic integrated circuits. As an important structural unit for SWNT-based electronics, the Schottky junction has a series of functions such as rectification, photoelectric detection, switching, etc. Here, we demonstrate a well-controlled localized radical reaction method to prepare an intramolecular SWNT Schottky junction with a closed edge. This junction exhibits strong gate-dependent rectifying behavior and a high rectification ratio of 962. Furthermore, the semiconducting part on the junction side could be effectively tuned from p-type doping to n-type doping, resulting in reversible rectifying behavior. Our work paves a new avenue for the design and synthesis of an SWNT Schottky junction, which is very important to future applications for carbon-based nanoelectronic devices.