Voltage-controlled skyrmion-based nanodevices for neuromorphic computing using a synthetic antiferromagnet

Nanoscale Adv. 2020 Feb 7;2(3):1309-1317. doi: 10.1039/d0na00009d. eCollection 2020 Mar 17.

Abstract

Spintronics exhibits significant potential for a neuromorphic computing system with high speed, high integration density, and low dissipation. In this article, we propose an ultralow-dissipation skyrmion-based nanodevice composed of a synthetic antiferromagnet (SAF) and a piezoelectric substrate for neuromorphic computing. Skyrmions/skyrmion bubbles can be generated in the upper layer of an SAF with a weak anisotropy energy (E a). Applying a weak electric field on the heterostructure, interlayer antiferromagnetic coupling can be manipulated, giving rise to a continuous transition between a large skyrmion bubble and a small skyrmion. This thus induces a variation of the resistance of a magnetic tunneling junction that can mimic the potentiation/depression of a synapse and the leaky-integral-and-fire function of a neuron at a cost of a very low energy consumption of 0.3 fJ. These results pave a way to ultralow power neuromorphic computing applications.