Facile Fabrication of CuO Nanoparticles Embedded in N-Doped Carbon Nanostructure for Electrochemical Sensing of Dopamine

Nebras Sobahi; Mohd Imran; Mohammad Ehtisham Khan; Akbar Mohammad; Md Mottahir Alam; Taeho Yoon; Ibrahim M Mehedi; Mohammad A Hussain; Mohammed J Abdulaal; Ahmad A Jiman

doi:10.1155/2022/6482133

Facile Fabrication of CuO Nanoparticles Embedded in N-Doped Carbon Nanostructure for Electrochemical Sensing of Dopamine

Bioinorg Chem Appl. 2022 Oct 14:2022:6482133. doi: 10.1155/2022/6482133. eCollection 2022.

Authors

Affiliations

¹ Department of Electrical & Computer Engineering, Faculty of Engineering, King Abdulaziz University, Jeddah 21589, Saudi Arabia.
² Department of Chemical Engineering, College of Engineering, Jazan University, P.O. Box 706, Jazan 45142, Saudi Arabia.
³ Department of Chemical Engineering Technology, College of Applied Industrial Technology (CAIT), Jazan University, Jazan 45971, Saudi Arabia.
⁴ School of Chemical Engineering, Yeungnam University, Gyeongsan-si, Gyeongbuk 38541, Republic of Korea.
⁵ Center of Excellence in Intelligent Engineering Systems (CEIES), King Abdulaziz University, Jeddah, Saudi Arabia.

Abstract

In the present study, a highly selective and sensitive electrochemical sensing platform for the detection of dopamine was developed with CuO nanoparticles embedded in N-doped carbon nanostructure (CuO@NDC). The successfully fabricated nanostructures were characterized by standard instrumentation techniques. The fabricated CuO@NDC nanostructures were used for the development of dopamine electrochemical sensor. The reaction mechanism of a dopamine on the electrode surface is a three-electron three-proton process. The proposed sensor's performance was shown to be superior to several recently reported investigations. Under optimized conditions, the linear equation for detecting dopamine by differential pulse voltammetry is I _pa (μA) = 0.07701 c (μM) - 0.1232 (R ² = 0.996), and the linear range is 5-75 μM. The limit of detection (LOD) and sensitivity were calculated as 0.868 μM and 421.1 μA/μM, respectively. The sensor has simple preparation, low cost, high sensitivity, good stability, and good reproducibility.