Excitons (electron-hole pairs bound by the Coulomb potential) play an important role in optical and electronic properties of layered materials. They can be used to modulate light with high frequencies due to the optical Pauli blocking. The properties of excitons in 2D materials are extremely anisotropic. However, due to nanometre sizes of excitons and their short life times, reliable tools to study this anisotropy are lacking. Here, we show how direct optical reflection measurements can be used to evaluate anisotropy of excitons in transition metal dichalcogenides MoS2. Using focused beam spectroscopic ellipsometry, we have measured the polarized optical reflection of bulk MoS2 for two crystal orientations: c-axis being perpendicular to the surface from which reflection is measured and c-axis being parallel to the surface from which reflection is measured. We found that for the parallel configuration the optical reflection near excitonic transitions is strongly affected by the presence of the exciton "dead" layer such that the excitonic reflection peaks become the excitonic dips due to light interference. At the same time, the optical reflection for the perpendicular orientation is not significantly altered by the exciton "dead" layer due to large anisotropy of exciton properties. Performing simultaneous Fresnel fitting for both geometries, we were able to evaluate exciton anisotropy in layered materials from simple optical measurements.
Keywords: anisotropy; dead layer; excitons; layered materials; optics.