Light-Induced Electric Field Enhanced Self-Powered Photodetector Based on Van der Waals Heterojunctions

Huiming Shang; Feng Gao; Mingjin Dai; YunXia Hu; Shuai Wang; Bo Xu; Peng Wang; Bo Gao; Jia Zhang; PingAn Hu

doi:10.1002/smtd.202200966

Light-Induced Electric Field Enhanced Self-Powered Photodetector Based on Van der Waals Heterojunctions

Small Methods. 2023 Jan;7(1):e2200966. doi: 10.1002/smtd.202200966. Epub 2022 Nov 28.

Authors

Huiming Shang^{1

2}, Feng Gao^{1

3}, Mingjin Dai⁴, YunXia Hu^{1

3}, Shuai Wang^{1

3}, Bo Xu^{1

3}, Peng Wang⁵, Bo Gao⁶, Jia Zhang^{1

7}, PingAn Hu^{1

2

3

8}

Affiliations

¹ MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China.
² School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150080, China.
³ School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China.
⁴ School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
⁵ School of Information Engineering, Zhejiang Ocean University, Zhoushan, 316022, China.
⁶ School of physics, Harbin Institute of Technology, Harbin, 150080, China.
⁷ School of mechatronic engineering, Harbin Institute of Technology, Harbin, 150080, China.
⁸ State Key Laboratory of Robotics and System, Harbin Institute of Technology, Harbin, 150080, China.

PMID: 36440646
DOI: 10.1002/smtd.202200966

Abstract

Self-powered photodetectors have attracted widespread attention due to their low power consumption which can be driven by the built-in electric field instead of external power, but it is very difficult to achieve high responsivity and fast response speed concurrently. Here, a self-powered photodetector with light-induced electric field enhancement based on a 2D InSe/WSe₂ /SnS₂ van der Waals heterojunction is designed. The light-induced electric field derived from the photo-generated electrons of SnS₂ accumulated at the SnS₂ /WSe₂ interface produces an additional negative gate voltage applied to the WSe₂ layer, which enhances the built-in electric field in the InSe/WSe₂ /SnS₂ heterojunction. Accordingly, the photocurrent and photoresponse speed of the heterostructure device are largely improved. The self-powered photodetector based on the InSe/WSe₂ /SnS₂ heterostructure exhibits a high responsivity of 550 mA W^-1 , which is a 50 times increase compared to the InSe/WSe₂ photodetector, and the response speed (110/120 µs) is one order of magnitude faster than that of the InSe/WSe₂ photodetector. The high responsivity and fast speed are caused by the stronger built-in electric field modulated by a light-induced electric field, which can separate carriers effectively and reduce drift times. This device architecture can provide a new avenue to fabricate high-responsivity, fast self-power photodetectors by utilizing the van der Waals heterojunction.

Keywords: 2D materials; built-in field; light-induced electric field; self-powered photodetectors; van der Waals heterojunctions.

Abstract

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