Sb2Se3 film with grain size over 10 µm toward X-ray detection

Chong Wang; Xinyuan Du; Siyu Wang; Hui Deng; Chao Chen; Guangda Niu; Jincong Pang; Kanghua Li; Shuaicheng Lu; Xuetian Lin; Haisheng Song; Jiang Tang

doi:10.1007/s12200-020-1064-5

Sb₂Se₃ film with grain size over 10 µm toward X-ray detection

Front Optoelectron. 2021 Sep;14(3):341-351. doi: 10.1007/s12200-020-1064-5. Epub 2020 Dec 23.

Authors

Chong Wang^#¹, Xinyuan Du^#¹, Siyu Wang¹, Hui Deng^{1

2}, Chao Chen¹, Guangda Niu³, Jincong Pang¹, Kanghua Li¹, Shuaicheng Lu¹, Xuetian Lin¹, Haisheng Song¹, Jiang Tang⁴

Affiliations

¹ Sargent Joint Research Center, Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China.
² College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China.
³ Sargent Joint Research Center, Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China. guangda_niu@mail.hust.edu.cn.
⁴ Sargent Joint Research Center, Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China. jtang@mail.hust.edu.cn.

^# Contributed equally.

Abstract

Direct X-ray detectors are considered as competitive next-generation X-ray detectors because of their high spatial resolution, high sensitivity, and simple device configuration. However, their potential is largely limited by the imperfections of traditional materials, such as the low crystallization temperature of α-Se and the low atomic numbers of α-Si and α-Se. Here, we report the Sb₂Se₃ X-ray thin-film detector with a p-n junction structure, which exhibited a sensitivity of 106.3 µC/(Gy_air·cm²) and response time of < 2.5 ms. This decent performance and the various advantages of Sb₂Se₃, such as the average atomic number of 40.8 and μτ product (μ is the mobility, and τ is the carrier lifetime) of 1.29 × 10^-5 cm²/V, indicate its potential for application in X-ray detection.

Keywords: Sb2Se3; X-ray detector; grain size; p-n junction; response speed.