Experimental study of endurance characteristics of Al-doped HfO2ferroelectric capacitor

Yejoo Choi; Jaemin Shin; Seungjun Moon; Jinhong Min; Changwoo Han; Changhwan Shin

doi:10.1088/1361-6528/acb7fc

Experimental study of endurance characteristics of Al-doped HfO₂ferroelectric capacitor

Nanotechnology. 2023 Feb 17;34(18). doi: 10.1088/1361-6528/acb7fc.

Authors

Yejoo Choi¹, Jaemin Shin², Seungjun Moon¹, Jinhong Min³, Changwoo Han¹, Changhwan Shin⁴

Affiliations

¹ Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
² Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, United States of America.
³ Department of Materials Science and Engineering, University of Michigan, Ann Arbor, United States of America.
⁴ School of Electrical Engineering, Korea University, Seoul, Republic of Korea.

PMID: 36724507
DOI: 10.1088/1361-6528/acb7fc

Abstract

In this work, the endurance characteristics of Al-doped HfO₂(HAO)-based metal-ferroelectric-metal (MFM) capacitors (which were annealed at 1000 °C) with various doping concentrations were investigated. The doping concentration was optimized for the high annealing temperature (1000 °C) process. To investigate the impact of cycling pulses on the endurance characteristics of HAO-based MFM capacitor, the rise/fall time (t_r/f) and hold time (t_h) for the cycling pulses were varied. Moreover, by adopting the recoverable fatigue process, the endurance characteristics under repetitive wake-up/fatigue processes were studied. The HAO capacitors achieved the remnant polarization (2P_r) of 23.767μC cm^-2at pristine state under the high annealing temperature. Furthermore, it was demonstrated that the endurance characteristics (∼10⁸cycles) of the HAO capacitors were comparable to them of other HfO₂-based ferroelectric capacitors. Lastly but not least, it turned out that the amount of oxygen and oxygen vacancies in the HAO thin film was dependent of doping concentrations for the film. The impact of oxygen and oxygen vacancies was quantitatively analyzed, in detail, with TEM, XPS and GIXRD analysis.

Keywords: HAO; endurance; fatigue; ferroelectric; oxygen vacancy; wake-up.